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  1. ; ; (, Open Science Framework)
    The curated content associated with this work is openly available at osf.io/3gdnk The South Big Data Innovation Hub held the 2021 Hands-on meeting in July 28-30. This hub is supported by NSF awards #1550305 and 1916589. The call for the event is: https://southbigdatahub-events.org/ All presentations (in ppt and pdf versions) are available as well as video from the event and transcriptions. Dr. Chadler Becker provided an overview of the materials platform at NIST. And the presentation is included in this component. 
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    Accepted Manuscript Full Text Available
  2. ; ; ; ; ; (, Proc. SPIE 10354, Nanoengineering: Fabrication, Properties, Optics, and Devices XIV)
    We report on the site-selective growth of >90% vertical GaAs nanowires (NWs) on Si (111) using self-assisted molecular beam epitaxy. The influences of growth parameters (pre-growth Ga opening time, V/III flux ratio) and processing conditions (reactive ion etching (RIE) and HF etching time) are investigated for different pitch lengths (200-1000 nm) to achieve vertical NWs. The processing variables determine the removal of the native oxide layer and the contact angle of Ga-droplet inside the patterned hole that are critical to the vertical orientation of the NWs. Pre-growth Ga-opening time is found to be a crucial factor determining the size of the droplet in the patterned hole, while the V/III beam equivalent pressure (BEP) ratio influenced the occupancy of the holes due to the axial growth of NWs being group-V limited. 
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    Full Text Available